Structure of an experimentally obtained memristor for memory devices:
1–glassceramic; 2–W; 3-TiN; 4-TiOX(x>2) or TiO2- TiOX(x>2); 5-Mo and 6–Al, and current-voltage characterisctic
Structure of an experimentally obtained memristor for memory devices:
1–glassceramic; 2–W; 3-TiN; 4-TiOX(x>2) or TiO2- TiOX(x>2); 5-Mo and 6–Al, and current-voltage characterisctic