2DEG heterostructures, PIN structures, transition metal oxides.
Development of processes for creation of a unified basic technology for micro-nano- and optoelectronics.
Microwave semiconductor integrated circuits technology.
Circuit design studies and semiconductor materials (based on AIIIBV structures, silicon and modified silicon) production and investigation.
LEPL Institute of Micro-and Nanoelectronics (IMNE) was established in December 28, 2011. It was founded on the basis of the department of semiconductor microelectronics of the Faculty of Physics of Iv.Javakhishvili Tbilisi State University and the Research Institute “MION